联系我们  |  网站地图  |  English   |  移动版  |  中国科学院 |ARP
站内搜索:
首页 简介 管理部门 科研部门 支撑部门 研究队伍 科研成果 成果转化 研究生教育 党建与创新文化 科普 信息公开 办公内网 OA系统
科技信息
Highly durable silicon c...
我国科学家在纳米晶闪烁体...
北林大用“皱纹纸”做出传...
中间态的发现可能带来更长...
Novel nano material for ...
Photoelectrode that can ...
低阻硒化锰纳米材料及其全...
研究人员通过使用硅纳米颗...
发现压力诱导氮化二钙从金...
Simulations reveal role ...
An unexpected gray area ...
北京大学在调控钙钛矿多晶...
第三代半导体器件制备及评...
石墨烯摩擦系数历史最低
Pushing 'print' on large...
现在位置:首页>新闻动态>科技信息
Researchers resolve a major mystery in 2-D material electronics
2018-09-12 08:40:31 | 【 【打印】【关闭】

Schematic drawing of a 2D-material-based lateral (left) and vertical (right) Schottky diode. For broad classes of 2D materials, the current-temperature relation can be universally described by a scaling exponent of 3/2 and 1, respectively, for lateral and vertical Schottky diodes. Credit: Singapore University of Technology and Design

  Schottky diodes are composed of a metal in contact with a semiconductor. Despite their simple construction, Schottky diodes are tremendously useful components in modern electronics. Schottky diodes fabricated using two-dimensional (2-D) materials have attracted major research attention in recent years due to their potential in transistors, rectifiers, radio frequency generators, logic gates, solar cells, chemical sensors, photodetectors, flexible electronics and so on.

  The understanding of 2-D-material-based Schottky diodes is, however, incomplete. Several theoretical models have co-existed in the literature and a model is often selected a priori without rigorous justifications. It is not uncommon to see an analytical model with underlying physics fundamentally contradicting the physical properties of 2-D materials applied for analysis of a 2-D material Schottky diode.

  Reporting in Physical Review Letters, researchers from the Singapore University of Technology and Design (SUTD) have made a major step forward in resolving the mysteries surrounding 2-D material Schottky diodes. By employing a rigorous theoretical analysis, they developed a new theory to describe different variants of 2-D-material-based Schottky diodes under a unifying framework. The new theory lays down a foundation that unites prior contrasting models, thus resolving a major confusion in 2-D material electronics.

  "A particularly remarkable finding is that the electrical current flowing across a 2-D material Schottky diode follows a one-size-fits-all universal scaling law for many types of 2-D materials," said first-author Dr. Yee Sin Ang from SUTD.

  Universal scaling laws are highly valuable in physics since they provide a practical "Swiss Army knife" for uncovering the inner workings of a physical system. Universal scaling laws have appeared in many branches of physics, including semiconductors, superconductors, fluid dynamics, mechanical fractures, and even in complex systems such as animal life span, election results, transportation and city growth.

  The universal scaling law discovered by SUTD researchers dictates how electrical current varies with temperature and is widely applicable to broad classes of 2-D systems including semiconductor quantum wells, graphene, silicene, germanene, stanene, transition metal dichalcogenides and the thin films of topological solids.

  "The simple mathematical form of the scaling law is particularly useful for applied scientists and engineers in developing novel 2-D material electronics," said co-author Prof. Hui Ying Yang from SUTD.

  The scaling laws discovered by SUTD researchers provide a simple tool for the extraction of Schottky barrier height—a physical quantity critically important for performance optimisation of 2-D material electronics.

  "The new theory has far-reaching impact in solid state physics," said co-author and principal investigator of this research, Prof. Lay Kee Ang from SUTD, "It signals the breakdown of classic diode equation widely used for traditional materials over the past 60 years, and shall improve our understanding on how to design better 2-D material electronics."

  Explore further: New device could turn heat energy into a viable fuel source 

  More information: Yee Sin Ang et al, Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials, Physical Review Letters (2018). DOI: 10.1103/PhysRevLett.121.056802  

  Journal reference: Physical Review Letters  

版权所有 中国科学院上海硅酸盐研究所 沪ICP备05005480号-1
长宁园区地址:上海市长宁区定西路1295号 电话:86-21-52412990 传真:86-21-52413903 邮编:200050
嘉定园区地址:上海市嘉定区和硕路585号  电话:86-21-69906002 传真:86-21-69906700 邮编:201899