Determining Interfacial Properties of Submicron Low-k films on Si Substrate by using Wedge Indentation Technique
Determining Interfacial Properties of Submicron Low-k films on Si Substrate by using Wedge Indentation Technique
Speaker
Dr. Zeng Kaiyang
National University of Singapore
National University of Singapore
时间:2007年7月2日(星期一)上午 9:30
地点:4号楼14楼2号会议室
联系人:陈立东 研究员
Determining Interfacial Properties of Submicron Low-k films on Si Substrate by using Wedge Indentation Technique
Abstract:
This talk presents recent studies on using wedge indentation technique to determine interfacial adhesion properties of low-k dielectric films, namely, MSQ-film (methyl-silsesquioxane) and BD-film (Black Diamond, BDTM), both on Si substrate. Interfacial crack initiation and propagation processes in the MSQ/Si system were first studied by using Focued-Ion-Beam (FIB) sectioning of the indentation impressions created by wedge tips with 90o and 120o of inclusion angles, Furthermore, the indentation induced stress is found to be proportional to the ratio of the indentation volume and interface delamination crack volume for both plane strain and non-plane strain cases. With this analysis, the interface toughness of the MSQ/Si and BD/Si system, in terms of strain-energy release rate, were then determined. The interface toughness for MSQ/Si system, from 90° wedge tip indentation was found to be 1.8943 ± 0.2801 J/m2, and 1.9192 ± 0.0754 J/m2 for 120° wedge tip indentation. The interface adhesion for BD-films on Si substrate with 200 nm and 500 nm thicknesses were found to be 6.6157 ± 1.5225 J/m2 and 6.3458 ± 2.2710 J/m2 respectively.
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