SEMINAR

Analysis and Testing Center for Inorganic Materials
State Key Laboratory of High Performance Ceramics
and Superfine Microstructure

无机材料分析测试中心
国家重点实验室

Materials Characterization in a High-Resolution FE-SEM

Speaker:

Prof. Raynald Gauvin

Department of Materials Engineering
McGill University

M. H. Wong Bldg, 3610 University Street
Montréal, Québec, Canada, H3A 2B2

时间：2011年10月21日 （星期五）10：00－11：00

地点：二号楼607会议室

联系人：许钫钫　  曾毅

欢迎广大科研人员和研究生参与讨论！

Abstract

The new generation of Field Emission Scanning Electron Microscope (FE-SEM) can perform high resolution imaging at incident electron beam energy below 1 keV. Images with resolution smaller than 2 nm are now guaranties by various manufacturers. Since imaging below 1 keV allows obtaining surface details of nanomaterials and reduces beam damage for sensitive materials, it is clear that electron microscopy is now entering in a new era. With FE-SEM that can operate in the 50 eV to 30 keV mode with many images modes like conventional bulk secondary electron (SE) or backscattered electron (BSE) imaging or new scanning transmission electron microscopy (STEM) imaging of transparent materials in bright field or dark field mode, the versatility of these microscopes is obvious. Also, if we keep in mind that we can also perform quantitative x-ray microanalysis with start of the art SDD EDS detectors and crystallographic characterization of materials with EBSD detectors, FE-SEM has a very bright future and its importance in science and technology will growth faster than ever because we have now microscopes that can deliver enough current with high spatial resolution to fully exploit the advantages of low voltage scanning electron microscopy as predicted by Von Ardenne as far as 1942. 

This seminar will present new results for the characterization of various nanomaterials obtained with the new Hitachi SU - 8000 cold field FE-SEM recently acquired by the research group of Pr. Gauvin. This FE-SEM has 1 SE lower detector, 2 SE upper detectors with various modes of energy filtration, a five quadrant BSE detector, a STEM detector that works in bright field, an electron convertor that allows to use the SE lower detector for dark field STEM imaging, a 80 mm² SDD EDs detector (Oxford Instrument) and the EBSD Nordlys II System (Oxford Instrument). The maximum probe current is 40 nA and this allows to perform quantitative x-ray microanalysis at low voltage. Finally, x-ray microanalysis and imaging in the VP-SEM will be presented.