联系我们  |  网站地图  |  English   |  移动版  |  中国科学院 |ARP
站内搜索:
首页 简介 管理部门 科研部门 支撑部门 研究队伍 科研成果 成果转化 研究生教育 党建与创新文化 科普 信息公开 办公内网
学术活动
结构陶瓷工程中心青年学术...
现代低温超导SQUID系统
黑色二氧化钛及其他相关研究
PMN-PT single crystal-ba...
MAPS多尺度模拟计算学术研...
何崇藩先生追思会
Emerging Materials and N...
二维材料表界面化学与催化
人工晶体中心学术讲坛(第...
ZnO-Bi2O3-based thick-fi...
Optimising surface charg...
2017 International Sympo...
First-principles Theory ...
血管化促进组织工程骨再生...
2017新型压电材料与声学器...
现在位置:首页>新闻动态>学术活动
Thermal Conductivity of Two-Dimensional Materials
2017-06-13 09:44:18 | 编辑: | 【 【打印】【关闭】

  SEMINAR

  The State Key Lab of

  High Performance Ceramics and Superfine Microstructure

  Shanghai Institute of Ceramics, Chinese Academy of Sciences

  中 国 科 学 院 上 海 硅 酸 盐 研 究 所 高 性 能 陶 瓷 和 超 微 结 构 国 家 重 点 实 验 室

  Thermal Conductivity of Two-Dimensional Materials

  Ronggui Yang

  Department of Mechanical Engineering, University of Colorado at Boulder

  时间:2017年6月15日(星期四)9:30

  地点:2号楼607会议室(国家重点实验室)

  欢迎广大科研人员和研究生参与讨论!

  联系人:史 迅(2803)

  报告摘要:

  Two-dimensional (2-D) materials, such as graphene, black phosphorus and transition metal dichalcogenides, have attracted increased interest due to their potential applications in electronic, optoelectronic, and energy systems. Understanding the phononic thermal properties in 2-D materials could be very important for the design of novel devices using 2-D materials.

  In the first part of this talk, the first-principles based Boltzmann transport equation approach is developed to predict a series of novel 2-D materials, including silicene and single-layer transition metal dichalcogenides (TMDs). Their thermal conductivities are found to be highly correlated to their crystal structure and atomic masses. Using the same approach, we also study the layer thickness-dependence of thermal conductivity of MoS2. Unlike conventional thin film materials, whose thermal conductivity is usually suppressed when the thickness decreases due to phonon-boundary scattering, the thermal conductivity of MoS2 decreases when increasing its thickness. It appears that both the phonon dispersion and the anharmonicity changes with the thickness of MoS2.

  In the second part of this talk, a variable spot size time-domain thermoreflectance (TDTR) approach is developed to systematically measure both the basal plane and cross plane thermal conductivity, Kr and Kz, of four TMD crystals, MoS2, MoSe2, WS2 and WSe2, over a wide range of temperature at 80-300 K. We consistently observed frequency dependence in both the through-plane thermal conductivity Kz and the Al/TMD interface thermal conductance G for all these TMD compounds, which we attributed to the non-equilibrium thermal resistance between different groups of phonons in the substrate during the TDTR experiments.

  报告人简介:

  Dr. Ronggui Yang is a Professor of Mechanical Engineering directing the Nano-enabled Energy Conversion, Storage, and Thermal Management Systems group (NEXT) at the University of Colorado Boulder (CU-Boulder). Dr. Yang received his Ph.D degree focusing on Nanoscale Heat Transfer with Professor Gang Chen in Mechanical Engineering from MIT in February 2006. Dr. Yang has published 6 book chapters and about 130 journal articles with an H-index of 40, annual citation over 1400 in 2016 and a total citation close to 8000 (Google Scholar). His innovative research has won him numerous awards including the 2014 ITS Young Investigator in Thermoelectrics from International Thermoelectric Society (ITS), the 2010 ASME Bergles-Rohsenow Young Investigator Award in Heat Transfer, an NSF CAREER Award in 2009, the MIT Technology Review’s TR35 Award and the DARPA Young Faculty Award in 2008. Dr. Yang is also well recognized for his professional services. Dr. Yang is currently the Chair (2015-2017) of the K-9 Technical Committee on Nanoscale Thermal Transport of ASME Heat Transfer Division. He is also an Associate Editor for ASME Journal of Heat Transfer and and Associate Editor for Heat Transfer Research. He was elected ASME Fellow in 2015.

版权所有 中国科学院上海硅酸盐研究所 沪ICP备05005480号
长宁园区地址:上海市长宁区定西路1295号 电话:86-21-52412990 传真:86-21-52413903 邮编:200050
嘉定园区地址:上海市嘉定区和硕路585号  电话:86-21-69906002 传真:86-21-69906700 邮编:201899